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| Composite Transistors XP1D874 N-channel junction FET Unit: mm For low-frequency impedance conversion For infrared sensor 0.65 2.00.1 2.10.1 0.425 1.250.1 0.425 0.65 s Features q q 1 2 3 5 0.2 Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. 0.9 0.1 4 s Basic Part Number of Element q 0 to 0.1 2SK1842 x 2 elements 1 : Source (FET1) 2 : Drain 3 : Source (FET2) 0.70.1 0.12 - 0.02 +0.05 0.20.1 s Absolute Maximum Ratings (Ta=25C) Parameter Symbol VGDO VGSO IG ID PT Tj Tstg Ratings -40 -40 10 1 150 150 -55 to +150 Unit V V mA mA mW C C 4 : Gate (FET2) 5 : Gate (FET1) EIAJ : SC-88A S-Mini Type Package (5-pin) Gate to drain voltage Rating Gate to source voltage of element Gate current Drain current Total power dissipation Overall Junction temperature Storage temperature Marking Symbol: EQ Internal Connection 1 2 3 4 FET 1 5 FET 2 s Electrical Characteristics Parameter Gate to drain voltage Drain current Gate cutoff current Forward transfer admittance Gate to source cutoff voltage Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance (Ta=25C) Symbol VGDS IDSS IGSS | YfS | VGSC Ciss Crss Coss Conditions IG = -10A, VGS = 0 VDS = 10V, VGS = 0 VGS = -20V, VDS = 0 VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, ID = 1A VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz 0.05 -1.3 1.0 0.4 0.4 -3.0 min -40 30 200 - 0.5 typ max Unit V A nA mS V pF pF pF 0.20.05 1 Composite Transistors PT -- Ta 250 XP1D874 ID -- VDS 240 Ta=25C 240 VDS=10V 200 ID -- VGS Total power dissipation PT (mW) 200 200 Drain current ID (A) 160 Drain current ID (A) VGS=0.4V 0.2V 0V 160 Ta=-25C 120 25C 80 75C 40 150 120 100 80 -0.2V -0.4V 50 40 -0.6V 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 -2.0 -1.4 -0.8 -0.2 0.4 Ambient temperature Ta (C) Drain to source voltage VDS (V) Drain to source voltage VGS (V) 2 |
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